SI2319CDS-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SI2319CDS-T1-GE3
Datasheet:
Description:
MOSFETs SOT-23-3 SMD/SMT P-Channel number of channels:1 1.25 W -40 V Continuous Drain Current (ID):-4.4 A 21 nC
| Parameter | Value |
|---|---|
| Length | 3.04 mm |
| Width | 1.4 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 77 mΩ |
| Height | 1.02 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | Unknown |
| Weight | 1.437803 g |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Max Power Dissipation | 2.5 W |
| Power Dissipation | 1.25 W |
| Threshold Voltage | -2.5 V |
| Number of Channels | 1 |
| Input capacitance | 595 pF |
| Continuous Drain Current (ID) | -4.4 A |
| Rds On Max | 77 mΩ |
| Drain to Source Voltage (Vdss) | -40 V |
| Turn-On Delay Time | 40 ns |
| Turn-Off Delay Time | 18 ns |
| Element Configuration | Single |
| Gate Charge | 21 nC |
| Drain to Source Resistance | 64 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | -1.2 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | -40 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 1.2 V |
| FET Type(Transistor Polarity) | P-Channel |
Stock: 5769
Distributors
pcbx
pcbxUnit Price$0.36989
Ext.Price$0.36989
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.36989 | $0.36989 |
| 10 | $0.33119 | $3.31190 |
| 50 | $0.29654 | $14.82700 |
| 100 | $0.24735 | $24.73500 |
| 500 | $0.20632 | $103.16000 |
| 1000 | $0.19836 | $198.36000 |
| 3000 | $0.19071 | $572.13000 |
| 5000 | $0.17993 | $899.65000 |