SI2319DS-T1-E3
Manufacturer:
Vishay
Mfr.Part #:
SI2319DS-T1-E3
Datasheet:
Description:
MOSFETs SOT-23-3 SMD/SMT P-Channel number of channels:1 750 mW -40 V Continuous Drain Current (ID):-2.3 A 17 nC
| Parameter | Value |
|---|---|
| Length | 3.04 mm |
| Width | 1.4 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 82 mΩ |
| Height | 1.02 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| Voltage | 40 V |
| REACH SVHC | Unknown |
| Weight | 1.437803 g |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current | 3 A |
| Max Power Dissipation | 750 mW |
| Power Dissipation | 750 mW |
| Threshold Voltage | -3 V |
| Number of Channels | 1 |
| Input capacitance | 470 pF |
| Continuous Drain Current (ID) | -2.3 A |
| Rds On Max | 82 mΩ |
| Drain to Source Voltage (Vdss) | -40 V |
| Turn-On Delay Time | 7 ns |
| Turn-Off Delay Time | 25 ns |
| Element Configuration | Single |
| Rise Time | 15 ns |
| Gate Charge | 17 nC |
| Drain to Source Resistance | 82 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | -3 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | -40 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 1 V |
| FET Type(Transistor Polarity) | P-Channel |
Stock: 2
Distributors
pcbx
pcbxUnit Price$0.80054
Ext.Price$0.80054
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.80054 | $0.80054 |
| 10 | $0.69466 | $6.94660 |
| 25 | $0.65910 | $16.47750 |
| 50 | $0.62536 | $31.26800 |
| 100 | $0.59335 | $59.33500 |
| 300 | $0.46569 | $139.70700 |
| 500 | $0.36550 | $182.75000 |
| 1000 | $0.34862 | $348.62000 |