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SI2319DS-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI2319DS-T1-GE3

Datasheet:
Description:

MOSFETs SOT-23-3 SMD/SMT P-Channel number of channels:1 750 mW 40 V Continuous Drain Current (ID):2.3 A 11.3 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCUnknown
Weight1.437803 g
Number of Elements1
Max Power Dissipation750 mW
Power Dissipation750 mW
Threshold Voltage-3 V
Number of Channels1
Input capacitance470 pF
Continuous Drain Current (ID)2.3 A
Rds On Max82 mΩ
Drain to Source Voltage (Vdss)-40 V
FET Type(Transistor Polarity)P-Channel
Turn-On Delay Time7 ns
Turn-Off Delay Time25 ns
Element ConfigurationSingle
Rise Time15 ns
Gate Charge11.3 nC
Drain to Source Resistance82 mΩ
Nominal Vgs-3 V
Gate to Source Voltage (Vgs)-20 V, 20 V
Drain to Source Breakdown Voltage (Vds)40 V
Schedule B8541290080
Gate to Source Threshold Voltage3 V

Stock: 80

Distributors
pcbx
Unit Price$0.41683
Ext.Price$0.41683
QtyUnit PriceExt.Price
1$0.41683$0.41683
10$0.32342$3.23420
25$0.29089$7.27225
50$0.26163$13.08150
100$0.23532$23.53200
300$0.22384$67.15200
500$0.21292$106.46000
1000$0.19934$199.34000