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SI2323DDS-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI2323DDS-T1-GE3

Datasheet:
Description:

MOSFETs SOT-23-3 SMD/SMT P-Channel number of channels:1 960 mW -20 V Continuous Drain Current (ID):-5.3 A 13.6 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
Height1.12 mm
PackagingReel
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant
REACH SVHCNo SVHC
Contact PlatingTin
Max Power Dissipation1.7 W
Power Dissipation960 mW
Threshold Voltage-1 V
Number of Channels1
Input capacitance1.16 nF
Continuous Drain Current (ID)-5.3 A
Rds On Max39 mΩ
Drain to Source Voltage (Vdss)-20 V
Turn-On Delay Time8 ns
Turn-Off Delay Time52 ns
Element ConfigurationSingle
Rise Time22 ns
Gate Charge13.6 nC
Drain to Source Resistance32 mΩ
Max Junction Temperature (Tj)150 °C
Gate to Source Voltage (Vgs)8 V
Drain to Source Breakdown Voltage (Vds)-20 V
Schedule B8541210080
Gate to Source Threshold Voltage1 V
FET Type(Transistor Polarity)P-Channel

Stock: 1548

Distributors
pcbx
Unit Price$0.39936
Ext.Price$0.39936
QtyUnit PriceExt.Price
1$0.39936$0.39936
10$0.36905$3.69050
25$0.34104$8.52600
50$0.31517$15.75850
100$0.28643$28.64300
300$0.26031$78.09300
500$0.23658$118.29000
1000$0.22738$227.38000
3000$0.21854$655.62000
5000$0.20629$1031.45000