SI2325DS-T1-E3
Manufacturer:
Vishay
Mfr.Part #:
SI2325DS-T1-E3
Datasheet:
Description:
MOSFETs SOT-23-3 SMD/SMT P-Channel number of channels:1 750 mW -150 V Continuous Drain Current (ID):-530 mA 12 nC
| Parameter | Value |
|---|---|
| Length | 3.04 mm |
| Width | 1.4 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 1.2 Ω |
| Height | 1.02 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Max Power Dissipation | 750 mW |
| Power Dissipation | 750 mW |
| Threshold Voltage | -4.5 V |
| Number of Channels | 1 |
| Input capacitance | 510 pF |
| Continuous Drain Current (ID) | -530 mA |
| Rds On Max | 1.2 Ω |
| Drain to Source Voltage (Vdss) | -150 V |
| Turn-On Delay Time | 7 ns |
| Turn-Off Delay Time | 16 ns |
| Element Configuration | Single |
| Gate Charge | 12 nC |
| Drain to Source Resistance | 1 Ω |
| Max Junction Temperature (Tj) | 150 °C |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | -150 V |
| Schedule B | 8541210080 |
| Gate to Source Threshold Voltage | 2.5 V |
| FET Type(Transistor Polarity) | P-Channel |
Stock: 1269
Distributors
pcbx
pcbxUnit Price$0.54528
Ext.Price$0.54528
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.54528 | $0.54528 |
| 10 | $0.44227 | $4.42270 |
| 25 | $0.40687 | $10.17175 |
| 50 | $0.37431 | $18.71550 |
| 100 | $0.34435 | $34.43500 |
| 300 | $0.32872 | $98.61600 |
| 500 | $0.31380 | $156.90000 |
| 1000 | $0.29692 | $296.92000 |