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SI2325DS-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI2325DS-T1-GE3

Datasheet:
Description:

MOSFETs SOT-23-3 SMD/SMT P-Channel number of channels:1 750 mW -150 V Continuous Drain Current (ID):530 mA 7.7 nC

ParameterValue
Length3.04 mm
Width1.4 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
Height1.02 mm
PackagingReel
RoHSCompliant
REACH SVHCUnknown
Contact PlatingTin
Number of Elements1
Max Power Dissipation750 mW
Power Dissipation750 mW
Threshold Voltage-4.5 V
Number of Channels1
Input capacitance510 pF
Continuous Drain Current (ID)530 mA
Rds On Max1.2 Ω
Drain to Source Voltage (Vdss)-150 V
Element ConfigurationSingle
Gate Charge7.7 nC
Drain to Source Resistance1.2 Ω
Nominal Vgs-4.5 V
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)-150 V
Schedule B8541210080
Gate to Source Threshold Voltage4.5 V
FET Type(Transistor Polarity)P-Channel

Stock: 1224

Distributors
pcbx
Unit Price$0.35894
Ext.Price$0.35894
QtyUnit PriceExt.Price
1$0.35894$0.35894
10$0.31507$3.15070
25$0.30184$7.54600
50$0.28917$14.45850
100$0.27703$27.70300
300$0.27160$81.48000
500$0.26627$133.13500
1000$0.26015$260.15000