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SI2329DS-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI2329DS-T1-GE3

Datasheet:
Description:

MOSFETs SOT-23-3 SMD/SMT P-Channel number of channels:1 1.25 W -8 V Continuous Drain Current (ID):-5.3 A 19.3 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
Height1.12 mm
PackagingReel
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant
REACH SVHCNo SVHC
Number of Elements1
Max Power Dissipation2.5 W
Power Dissipation1.25 W
Threshold Voltage-350 mV
Number of Channels1
Input capacitance1.485 nF
Continuous Drain Current (ID)-5.3 A
Rds On Max30 mΩ
Drain to Source Voltage (Vdss)-8 V
Turn-On Delay Time20 ns
Turn-Off Delay Time46 ns
Rise Time22 ns
Gate Charge19.3 nC
Drain to Source Resistance25 mΩ
Max Junction Temperature (Tj)150 °C
Gate to Source Voltage (Vgs)5 V
Drain to Source Breakdown Voltage (Vds)-8 V
Schedule B8541290080
Gate to Source Threshold Voltage350 mV
FET Type(Transistor Polarity)P-Channel

Stock: 18381

Distributors
pcbx
Unit Price$0.43174
Ext.Price$0.43174
QtyUnit PriceExt.Price
1$0.43174$0.43174
10$0.28384$2.83840
50$0.25832$12.91600
100$0.23510$23.51000
500$0.18552$92.76000
1000$0.16757$167.57000
3000$0.14534$436.02000
5000$0.13047$652.35000
10000$0.11713$1171.30000