SI2333CDS-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SI2333CDS-T1-GE3
Datasheet:
Description:
MOSFETs SOT-23-3 SMD/SMT P-Channel number of channels:1 1.25 W -12 V Continuous Drain Current (ID):-5.1 A 9 nC
| Parameter | Value |
|---|---|
| Length | 3.04 mm |
| Width | 1.4 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 35 mΩ |
| Height | 1.02 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| Voltage | 12 V |
| REACH SVHC | Unknown |
| Weight | 1.437803 g |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current | 71 A |
| Max Power Dissipation | 2.5 W |
| Power Dissipation | 1.25 W |
| Threshold Voltage | -400 mV |
| Number of Channels | 1 |
| Input capacitance | 1.225 nF |
| Continuous Drain Current (ID) | -5.1 A |
| Rds On Max | 35 mΩ |
| Drain to Source Voltage (Vdss) | -12 V |
| Turn-On Delay Time | 13 ns |
| Turn-Off Delay Time | 45 ns |
| Element Configuration | Single |
| Rise Time | 35 ns |
| Gate Charge | 9 nC |
| Drain to Source Resistance | 28.5 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | -1 V |
| Gate to Source Voltage (Vgs) | 8 V |
| Drain to Source Breakdown Voltage (Vds) | -12 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 1 V |
| FET Type(Transistor Polarity) | P-Channel |
Stock: 13204
Distributors
pcbx
pcbxUnit Price$0.20381
Ext.Price$0.20381
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.20381 | $0.20381 |
| 10 | $0.18265 | $1.82650 |
| 50 | $0.16368 | $8.18400 |
| 100 | $0.14377 | $14.37700 |
| 500 | $0.12629 | $63.14500 |
| 1000 | $0.11481 | $114.81000 |
| 3000 | $0.10437 | $313.11000 |
| 5000 | $0.09849 | $492.45000 |