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SI2333DDS-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI2333DDS-T1-GE3

Datasheet:
Description:

MOSFETs SOT-23-3 SMD/SMT P-Channel number of channels:1 1.2 W -12 V Continuous Drain Current (ID):-6 A 9 nC

ParameterValue
Length3.04 mm
Width1.4 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
Height1.02 mm
PackagingReel
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant
REACH SVHCNo SVHC
Weight1.437803 g
Number of Elements1
Max Power Dissipation1.7 W
Power Dissipation1.2 W
Threshold Voltage-1 V
Number of Channels1
Input capacitance1.275 nF
Continuous Drain Current (ID)-6 A
Rds On Max28 mΩ
Drain to Source Voltage (Vdss)-12 V
Turn-On Delay Time26 ns
Turn-Off Delay Time45 ns
Element ConfigurationSingle
Rise Time24 ns
Gate Charge9 nC
Drain to Source Resistance23 mΩ
Max Junction Temperature (Tj)150 °C
Gate to Source Voltage (Vgs)8 V
Drain to Source Breakdown Voltage (Vds)-12 V
Schedule B8541290080
Gate to Source Threshold Voltage1 V
FET Type(Transistor Polarity)P-Channel

Stock: 3621

Distributors
pcbx
Unit Price$0.18710
Ext.Price$0.18710
QtyUnit PriceExt.Price
1$0.18710$0.18710
10$0.16626$1.66260
50$0.14774$7.38700
100$0.12804$12.80400
500$0.11097$55.48500
1000$0.10666$106.66000
3000$0.10251$307.53000
5000$0.09673$483.65000