SI2333DS-T1-E3
Manufacturer:
Vishay
Mfr.Part #:
SI2333DS-T1-E3
Datasheet:
Description:
MOSFETs SOT-23-3 SMD/SMT P-Channel number of channels:1 750 mW -12 V Continuous Drain Current (ID):-4.1 A 11.5 nC
| Parameter | Value |
|---|---|
| Length | 3.04 mm |
| Width | 1.4 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 32 mΩ |
| Height | 1.02 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | Unknown |
| Weight | 1.437803 g |
| Number of Elements | 1 |
| Max Power Dissipation | 750 mW |
| Power Dissipation | 750 mW |
| Threshold Voltage | -1 V |
| Number of Channels | 1 |
| Input capacitance | 1.1 nF |
| Continuous Drain Current (ID) | -4.1 A |
| Rds On Max | 32 mΩ |
| Drain to Source Voltage (Vdss) | -12 V |
| Turn-On Delay Time | 25 ns |
| Turn-Off Delay Time | 72 ns |
| Element Configuration | Single |
| Rise Time | 45 ns |
| Gate Charge | 11.5 nC |
| Drain to Source Resistance | 32 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | -1 V |
| Gate to Source Voltage (Vgs) | 8 V |
| Drain to Source Breakdown Voltage (Vds) | -12 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 1 V |
| FET Type(Transistor Polarity) | P-Channel |
Stock: 229
Distributors
pcbx
pcbxUnit Price$0.68282
Ext.Price$0.68282
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.68282 | $0.68282 |
| 10 | $0.65451 | $6.54510 |
| 25 | $0.62738 | $15.68450 |
| 50 | $0.54379 | $27.18950 |
| 100 | $0.47134 | $47.13400 |
| 300 | $0.40760 | $122.28000 |
| 500 | $0.35248 | $176.24000 |