SI2333DS-T1-GE3
Manufacturer:
VBsemi
Mfr.Part #:
SI2333DS-T1-GE3
Datasheet:
Description:
MOSFETs SOT-23-3 SMD/SMT P-Channel number of channels:1 2.5 W -20 V Continuous Drain Current (ID):5 A 10 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Reel |
| RoHS | Compliant |
| Power Dissipation | 2.5 W |
| Number of Channels | 1 |
| Input capacitance | 835 pF |
| Continuous Drain Current (ID) | 5 A |
| FET Type(Transistor Polarity) | P-Channel |
| Gate Charge | 10 nC |
| Drain to Source Resistance | 35 mΩ |
| Gate to Source Voltage (Vgs) | 10 V |
| Drain to Source Breakdown Voltage (Vds) | -20 V |
| Gate to Source Threshold Voltage | 500 mV, 1.5 V |
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