SI2334DS-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SI2334DS-T1-GE3
Datasheet:
Description:
MOSFETs SOT-23-3 SMD/SMT N-Channel 1.3 W 30 V Continuous Drain Current (ID):4.9 A 10 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Max Power Dissipation | 1.3 W |
| Power Dissipation | 1.3 W |
| Threshold Voltage | 400 mV |
| Input capacitance | 634 pF |
| Continuous Drain Current (ID) | 4.9 A |
| Rds On Max | 44 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Rise Time | 10 ns |
| Gate Charge | 10 nC |
| Nominal Vgs | 400 mV |
| Gate to Source Voltage (Vgs) | -8 V, 8 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| FET Type(Transistor Polarity) | N-Channel |
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