SI2337DS-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SI2337DS-T1-GE3
Datasheet:
Description:
MOSFETs SOT-23-3 SMD/SMT P-Channel number of channels:1 760 mW -80 V Continuous Drain Current (ID):1.2 A 7 nC
| Parameter | Value |
|---|---|
| Length | 3.04 mm |
| Width | 1.4 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 270 mΩ |
| Height | 1.02 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Max Power Dissipation | 760 mW |
| Power Dissipation | 760 mW |
| Threshold Voltage | -4 V |
| Number of Channels | 1 |
| Input capacitance | 500 pF |
| Continuous Drain Current (ID) | 1.2 A |
| Rds On Max | 270 mΩ |
| Drain to Source Voltage (Vdss) | 80 V |
| Turn-On Delay Time | 15 ns |
| Turn-Off Delay Time | 20 ns |
| Element Configuration | Single |
| Fall Time | 12 ns |
| Rise Time | 18 ns |
| Gate Charge | 7 nC |
| Drain to Source Resistance | 270 mΩ |
| Nominal Vgs | -4 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | -80 V |
| Schedule B | 8541210080 |
| Gate to Source Threshold Voltage | 4 V |
| FET Type(Transistor Polarity) | P-Channel |
Stock: 310
Distributors
pcbx
pcbxUnit Price$0.98231
Ext.Price$0.98231
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.98231 | $0.98231 |
| 10 | $0.62239 | $6.22390 |
| 25 | $0.54283 | $13.57075 |
| 50 | $0.47344 | $23.67200 |
| 100 | $0.41293 | $41.29300 |
| 300 | $0.36675 | $110.02500 |
| 500 | $0.32573 | $162.86500 |
| 1000 | $0.29324 | $293.24000 |
| 3000 | $0.26930 | $807.90000 |
| 5000 | $0.23510 | $1175.50000 |