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SI2347DS-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI2347DS-T1-GE3

Datasheet:
Description:

MOSFETs SOT-23-3 SMD/SMT P-Channel number of channels:1 1.7 W -30 V Continuous Drain Current (ID):3.8 A 6.9 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
Height1.12 mm
PackagingReel
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant
REACH SVHCNo SVHC
Contact PlatingTin
Number of Elements1
Max Power Dissipation1.7 W
Power Dissipation1.7 W
Threshold Voltage-2.5 V
Number of Channels1
Input capacitance705 pF
Continuous Drain Current (ID)3.8 A
Rds On Max42 mΩ
Drain to Source Voltage (Vdss)-30 V
Turn-Off Delay Time19 ns
Element ConfigurationSingle
Rise Time6 ns
Gate Charge6.9 nC
Drain to Source Resistance68 mΩ
Max Junction Temperature (Tj)150 °C
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)-30 V
Schedule B8541290080
Gate to Source Threshold Voltage2.5 V
FET Type(Transistor Polarity)P-Channel

Stock: 3977

Distributors
pcbx
Unit Price$0.20726
Ext.Price$0.20726
QtyUnit PriceExt.Price
1$0.20726$0.20726
10$0.18574$1.85740
50$0.16646$8.32300
100$0.14627$14.62700
500$0.12853$64.26500
1000$0.11920$119.20000
3000$0.11054$331.62000
5000$0.10457$522.85000