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SI2356DS-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI2356DS-T1-GE3

Datasheet:
Description:

MOSFETs SOT-23-3 SMD/SMT N-Channel number of channels:1 960 mW 40 V Continuous Drain Current (ID):3.2 A 3.8 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
Height1.12 mm
PackagingReel
Lead FreeLead Free
RoHSCompliant
REACH SVHCNo SVHC
Weight1.437803 g
Max Power Dissipation1.7 W
Power Dissipation960 mW
Threshold Voltage1.5 V
Number of Channels1
Input capacitance370 pF
Continuous Drain Current (ID)3.2 A
Rds On Max51 mΩ
Drain to Source Voltage (Vdss)40 V
Turn-On Delay Time6 ns
Turn-Off Delay Time13 ns
Element ConfigurationSingle
Rise Time52 ns
Gate Charge3.8 nC
Drain to Source Resistance42 mΩ
Max Junction Temperature (Tj)150 °C
Gate to Source Voltage (Vgs)12 V
Drain to Source Breakdown Voltage (Vds)40 V
Schedule B8541210080
Gate to Source Threshold Voltage1.5 V
FET Type(Transistor Polarity)N-Channel

Stock: 10046

Distributors
pcbx
Unit Price$0.20525
Ext.Price$0.20525
QtyUnit PriceExt.Price
1$0.20525$0.20525
10$0.18205$1.82050
50$0.16147$8.07350
100$0.13953$13.95300
500$0.12057$60.28500
1000$0.11575$115.75000
3000$0.11113$333.39000
5000$0.10476$523.80000