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SI2366DS-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI2366DS-T1-GE3

Datasheet:
Description:

MOSFETs SOT-23-3 SMD/SMT N-Channel number of channels:1 1.25 W 30 V Continuous Drain Current (ID):5.8 A 3.2 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCNo SVHC
Number of Elements1
Max Power Dissipation2.1 W
Power Dissipation1.25 W
Threshold Voltage1.2 V
Number of Channels1
Input capacitance335 pF
Continuous Drain Current (ID)5.8 A
Rds On Max36 mΩ
Drain to Source Voltage (Vdss)30 V
Turn-On Delay Time5 ns
Turn-Off Delay Time14 ns
Element ConfigurationSingle
Fall Time8 ns
Rise Time12 ns
Gate Charge3.2 nC
Drain to Source Resistance30 mΩ
Nominal Vgs1.2 V
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)30 V
Schedule B8541290080
Gate to Source Threshold Voltage2.5 V
FET Type(Transistor Polarity)N-Channel

Stock: 5432

Distributors
pcbx
Unit Price$0.34454
Ext.Price$0.34454
QtyUnit PriceExt.Price
1$0.34454$0.34454
10$0.24194$2.41940
50$0.20083$10.04150
100$0.16671$16.67100
500$0.13508$67.54000
1000$0.11883$118.83000
3000$0.10088$302.64000
5000$0.08883$444.15000
10000$0.07822$782.20000