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SI2369DS-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI2369DS-T1-GE3

Datasheet:
Description:

MOSFETs SOT-23-3 SMD/SMT P-Channel number of channels:1 1.25 W -30 V Continuous Drain Current (ID):-5.4 A 11.4 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
Height1.12 mm
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCNo SVHC
Contact PlatingTin
Max Power Dissipation2.5 W
Power Dissipation1.25 W
Threshold Voltage-1.2 V
Number of Channels1
Input capacitance1.295 nF
Continuous Drain Current (ID)-5.4 A
Rds On Max29 mΩ
Drain to Source Voltage (Vdss)-30 V
Turn-On Delay Time13 ns
Turn-Off Delay Time38 ns
Gate Charge11.4 nC
Drain to Source Resistance24 mΩ
Max Junction Temperature (Tj)150 °C
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)-30 V
Gate to Source Threshold Voltage2.5 V
FET Type(Transistor Polarity)P-Channel

Stock: 3062

Distributors
pcbx
Unit Price$0.32256
Ext.Price$0.32256
QtyUnit PriceExt.Price
1$0.32256$0.32256
10$0.28733$2.87330
50$0.25594$12.79700
100$0.22266$22.26600
500$0.19371$96.85500
1000$0.18310$183.10000
3000$0.17307$519.21000
5000$0.16337$816.85000