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SI2377EDS-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI2377EDS-T1-GE3

Datasheet:
Description:

MOSFETs SOT-23-3 SMD/SMT P-Channel number of channels:1 1.25 W -20 V Continuous Drain Current (ID):-4.4 A 7.6 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
Resistance61 MΩ
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCNo SVHC
Contact PlatingTin
Number of Elements1
Max Power Dissipation1.8 W
Power Dissipation1.25 W
Threshold Voltage-400 mV
Number of Channels1
Continuous Drain Current (ID)-4.4 A
Rds On Max61 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Gate Charge7.6 nC
Drain to Source Resistance50 mΩ
Nominal Vgs-400 mV
Gate to Source Voltage (Vgs)8 V
Drain to Source Breakdown Voltage (Vds)-20 V
Schedule B8541290080
Gate to Source Threshold Voltage1 V
FET Type(Transistor Polarity)P-Channel

Stock: 1508

Distributors
pcbx
Unit Price$0.33254
Ext.Price$0.33254
QtyUnit PriceExt.Price
1$0.33254$0.33254
10$0.29651$2.96510
50$0.26438$13.21900
100$0.23040$23.04000
500$0.20079$100.39500
1000$0.19341$193.41000
3000$0.18630$558.90000
5000$0.17640$882.00000