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SI2399DS-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI2399DS-T1-GE3

Datasheet:
Description:

MOSFETs SOT-23-3 SMD/SMT P-Channel number of channels:1 1.25 W -20 V Continuous Drain Current (ID):-6 A 10 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
Height1.12 mm
PackagingReel
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant
REACH SVHCNo SVHC
Number of Elements1
Max Power Dissipation2.5 W
Power Dissipation1.25 W
Threshold Voltage-600 mV
Number of Channels1
Input capacitance835 pF
Continuous Drain Current (ID)-6 A
Rds On Max34 mΩ
Drain to Source Voltage (Vdss)-20 V
Turn-On Delay Time22 ns
Turn-Off Delay Time28 ns
Rise Time20 ns
Gate Charge10 nC
Drain to Source Resistance28 mΩ
Max Junction Temperature (Tj)150 °C
Nominal Vgs-600 mV
Gate to Source Voltage (Vgs)12 V
Drain to Source Breakdown Voltage (Vds)-20 V
Schedule B8541290080
Gate to Source Threshold Voltage1.5 V
FET Type(Transistor Polarity)P-Channel

Stock: 328

Distributors
pcbx
Unit Price$0.48864
Ext.Price$0.48864
QtyUnit PriceExt.Price
1$0.48864$0.48864
10$0.37872$3.78720
25$0.34088$8.52200
50$0.30682$15.34100
100$0.27616$27.61600
300$0.26228$78.68400
500$0.24910$124.55000
1000$0.23416$234.16000