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SI3410DV-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI3410DV-T1-GE3

Datasheet:
Description:

MOSFETs TSOP-6 SMD/SMT N-Channel number of channels:1 2 W 30 V Continuous Drain Current (ID):8 A 33 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins6
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCUnknown
Number of Elements1
Max Power Dissipation2 W
Power Dissipation2 W
Threshold Voltage3 V
Number of Channels1
Input capacitance1.295 nF
Continuous Drain Current (ID)8 A
Rds On Max19.5 mΩ
Drain to Source Voltage (Vdss)30 V
Turn-On Delay Time21 ns
Turn-Off Delay Time20 ns
Element ConfigurationSingle
Fall Time9 ns
Rise Time14 ns
Gate Charge33 nC
Drain to Source Resistance19.5 mΩ
Nominal Vgs3 V
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)30 V
Schedule B8541290080
Gate to Source Threshold Voltage1 V
FET Type(Transistor Polarity)N-Channel

Stock: 10360

Distributors
pcbx
Unit Price$0.61983
Ext.Price$0.61983
QtyUnit PriceExt.Price
1$0.61983$0.61983
10$0.39156$3.91560
25$0.36303$9.07575
50$0.33658$16.82900
100$0.31205$31.20500
300$0.27574$82.72200
500$0.24366$121.83000
1000$0.22143$221.43000
3000$0.18039$541.17000
5000$0.16414$820.70000