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SI3417DV-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI3417DV-T1-GE3

Datasheet:
Description:

MOSFETs TSOP-6 SMD/SMT P-Channel number of channels:1 2 W -30 V Continuous Drain Current (ID):8 A 50 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins6
PackagingReel
RoHSCompliant
Weight19.986414 mg
Number of Elements1
Max Power Dissipation4.2 W
Power Dissipation2 W
Number of Channels1
Input capacitance1.35 nF
Continuous Drain Current (ID)8 A
Rds On Max25.2 mΩ
Drain to Source Voltage (Vdss)30 V
Turn-On Delay Time42 ns
Turn-Off Delay Time40 ns
Element ConfigurationSingle
Rise Time35 ns
Gate Charge50 nC
Drain to Source Resistance30 mΩ
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)-30 V
Schedule B8541290080
Gate to Source Threshold Voltage3 V
FET Type(Transistor Polarity)P-Channel

Stock: 612

Distributors
pcbx
Unit Price$0.32045
Ext.Price$0.32045
QtyUnit PriceExt.Price
1$0.32045$0.32045
10$0.28249$2.82490
50$0.24902$12.45100
100$0.21299$21.29900
500$0.18217$91.08500
1000$0.17426$174.26000
3000$0.16670$500.10000
5000$0.15621$781.05000