SI3590DV-T1-E3
Manufacturer:
Vishay
Mfr.Part #:
SI3590DV-T1-E3
Datasheet:
Description:
MOSFETs TSOP-6 SMD/SMT P-Channel number of channels:2 830 mW 30 V Continuous Drain Current (ID):2.5 A 3 nC, 3.8 nC
| Parameter | Value |
|---|---|
| Length | 3.05 mm |
| Width | 1.65 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 6 |
| Resistance | 170 MΩ |
| Height | 1 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | Unknown |
| Weight | 19.986414 mg |
| Number of Elements | 2 |
| Max Power Dissipation | 830 mW |
| Power Dissipation | 830 mW |
| Number of Channels | 2 |
| Continuous Drain Current (ID) | 2.5 A |
| Rds On Max | 77 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| FET Type(Transistor Polarity) | P-Channel |
| Turn-On Delay Time | 5 ns |
| Turn-Off Delay Time | 20 ns |
| Rise Time | 15 ns |
| Gate Charge | 3 nC, 3.8 nC |
| Drain to Source Resistance | 170 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 600 mV |
| Gate to Source Voltage (Vgs) | 12 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| Schedule B | 8541210080 |
| Gate to Source Threshold Voltage | 600 mV |
Stock: 33
Distributors
pcbx
pcbxUnit Price$0.37190
Ext.Price$0.37190
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.37190 | $0.37190 |
| 10 | $0.29510 | $2.95100 |
| 50 | $0.25692 | $12.84600 |
| 100 | $0.22368 | $22.36800 |
| 500 | $0.17955 | $89.77500 |
| 1000 | $0.16888 | $168.88000 |