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SI3590DV-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI3590DV-T1-GE3

Datasheet:
Description:

MOSFETs TSOP-6 SMD/SMT N-Channel, P-Channel number of channels:2 830 mW 30 V Continuous Drain Current (ID):2.5 A 4.5 nC, 6 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins6
PackagingReel
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant
REACH SVHCNo SVHC
Weight19.986414 mg
Number of Elements2
Max Power Dissipation830 mW
Power Dissipation830 mW
Threshold Voltage1.5 V
Number of Channels2
Continuous Drain Current (ID)2.5 A
Rds On Max77 mΩ
Drain to Source Voltage (Vdss)30 V
Turn-On Delay Time5 ns
Gate Charge4.5 nC, 6 nC
Drain to Source Resistance135 mΩ
Nominal Vgs1.5 V
Gate to Source Voltage (Vgs)12 V
Drain to Source Breakdown Voltage (Vds)30 V
Schedule B8541210080
Gate to Source Threshold Voltage600 mV
FET Type(Transistor Polarity)N-Channel, P-Channel

Stock: 1135

Distributors
pcbx
Unit Price$0.48384
Ext.Price$0.48384
QtyUnit PriceExt.Price
1$0.48384$0.48384
10$0.40022$4.00220
25$0.36610$9.15250
50$0.33489$16.74450
100$0.30633$30.63300
300$0.29400$88.20000
500$0.28217$141.08500
1000$0.27160$271.60000