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SI4164DY-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI4164DY-T1-GE3

Datasheet:
Description:

MOSFETs SOIC-8 SMD/SMT N-Channel number of channels:1 3 W 30 V Continuous Drain Current (ID):30 A 95 nC

ParameterValue
Length5 mm
Width4 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins8
Resistance3.2 MΩ
Height1.55 mm
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCNo SVHC
Contact PlatingTin
Number of Elements1
Max Power Dissipation6 W
Power Dissipation3 W
Threshold Voltage2.5 V
Number of Channels1
Input capacitance3.545 nF
Continuous Drain Current (ID)30 A
Rds On Max3.2 mΩ
Drain to Source Voltage (Vdss)30 V
Turn-On Delay Time35 ns
Turn-Off Delay Time48 ns
Element ConfigurationSingle
Fall Time16 ns
Rise Time16 ns
Gate Charge95 nC
Drain to Source Resistance3.2 mΩ
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)30 V
Schedule B8541290080
Gate to Source Threshold Voltage1.2 V
FET Type(Transistor Polarity)N-Channel

Stock: 11

Distributors
pcbx
Unit Price$0.76790
Ext.Price$0.76790
QtyUnit PriceExt.Price
1$0.76790$0.76790
10$0.75024$7.50240
25$0.74485$18.62125
50$0.73950$36.97500
100$0.73419$73.41900