SI4168DY-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SI4168DY-T1-GE3
Datasheet:
Description:
MOSFETs SOIC-8 SMD/SMT N-Channel number of channels:1 2.5 W 30 V Continuous Drain Current (ID):24 A 44 nC
| Parameter | Value |
|---|---|
| Length | 5 mm |
| Width | 4 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Height | 1.5 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| Number of Elements | 1 |
| Max Power Dissipation | 5.7 W |
| Power Dissipation | 2.5 W |
| Number of Channels | 1 |
| Input capacitance | 1.72 nF |
| Continuous Drain Current (ID) | 24 A |
| Rds On Max | 5.7 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Turn-On Delay Time | 25 ns |
| Turn-Off Delay Time | 30 ns |
| Fall Time | 15 ns |
| Rise Time | 14 ns |
| Gate Charge | 44 nC |
| Drain to Source Resistance | 6.2 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 1 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 2016
Distributors
pcbx
pcbxUnit Price$0.61983
Ext.Price$0.61983
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.61983 | $0.61983 |
| 10 | $0.50868 | $5.08680 |
| 25 | $0.47155 | $11.78875 |
| 50 | $0.43713 | $21.85650 |
| 100 | $0.40524 | $40.52400 |
| 300 | $0.38236 | $114.70800 |
| 500 | $0.36078 | $180.39000 |
| 1000 | $0.32915 | $329.15000 |
| 3000 | $0.29583 | $887.49000 |
| 5000 | $0.26588 | $1329.40000 |