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SI4178DY-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI4178DY-T1-GE3

Datasheet:
Description:

MOSFETs SOIC-8 SMD/SMT N-Channel number of channels:1 2.4 W 30 V Continuous Drain Current (ID):12 A 7.5 nC

ParameterValue
Length5 mm
Width4 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins8
Resistance21 mΩ
Height1.55 mm
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCUnknown
Contact PlatingTin
Number of Elements1
Max Power Dissipation5 W
Power Dissipation2.4 W
Threshold Voltage2.8 V
Number of Channels1
Input capacitance405 pF
Continuous Drain Current (ID)12 A
Rds On Max21 mΩ
Drain to Source Voltage (Vdss)30 V
Turn-On Delay Time20 ns
Turn-Off Delay Time12 ns
Element ConfigurationSingle
Fall Time10 ns
Gate Charge7.5 nC
Drain to Source Resistance17 mΩ
Nominal Vgs1.4 V
Gate to Source Voltage (Vgs)25 V
Drain to Source Breakdown Voltage (Vds)30 V
Schedule B8541290080
Gate to Source Threshold Voltage1.4 V
FET Type(Transistor Polarity)N-Channel

Stock: 9

Distributors
pcbx
Unit Price$0.29616
Ext.Price$0.29616
QtyUnit PriceExt.Price
1$0.29616$0.29616
10$0.26073$2.60730
50$0.22954$11.47700
100$0.19586$19.58600
500$0.16713$83.56500
1000$0.15866$158.66000
3000$0.15062$451.86000
5000$0.14298$714.90000