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SI4190ADY-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI4190ADY-T1-GE3

Datasheet:
Description:

MOSFETs SOIC-8 SMD/SMT N-Channel number of channels:1 3 W 100 V Continuous Drain Current (ID):13 A 67 nC

ParameterValue
Length5 mm
Width4 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins8
Resistance8.8 MΩ
Height1.5 mm
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCNo SVHC
Contact PlatingTin
Number of Elements1
Max Power Dissipation6 W
Power Dissipation3 W
Threshold Voltage1.5 V
Number of Channels1
Input capacitance1.97 nF
Continuous Drain Current (ID)13 A
Rds On Max8.8 mΩ
Drain to Source Voltage (Vdss)100 V
Turn-On Delay Time12 ns
Turn-Off Delay Time34 ns
Element ConfigurationSingle
Gate Charge67 nC
Drain to Source Resistance7.3 mΩ
Max Junction Temperature (Tj)150 °C
Nominal Vgs1.5 V
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)100 V
Schedule B8541290080
Gate to Source Threshold Voltage1.5 V
FET Type(Transistor Polarity)N-Channel

Stock: 4931

Distributors
pcbx
Unit Price$0.79509
Ext.Price$0.79509
QtyUnit PriceExt.Price
1$0.79509$0.79509
10$0.71985$7.19850
25$0.69598$17.39950
50$0.67291$33.64550
100$0.65060$65.06000
300$0.60543$181.62900
500$0.56340$281.70000
1000$0.55485$554.85000
3000$0.52443$1573.29000
5000$0.49568$2478.40000
10000$0.46850$4685.00000