SI4200DY-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SI4200DY-T1-GE3
Datasheet:
Description:
MOSFETs SOIC-8 SMD/SMT N-Channel number of channels:2 2 W 25 V Continuous Drain Current (ID):7.3 A 12 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| Weight | 506.605978 mg |
| Number of Elements | 2 |
| Max Power Dissipation | 2 W |
| Power Dissipation | 2 W |
| Number of Channels | 2 |
| Input capacitance | 415 pF |
| Continuous Drain Current (ID) | 7.3 A |
| Rds On Max | 25 mΩ |
| Drain to Source Voltage (Vdss) | 25 V |
| Element Configuration | Dual |
| Rise Time | 10 ns |
| Gate Charge | 12 nC |
| Drain to Source Resistance | 20 mΩ |
| Gate to Source Voltage (Vgs) | 16 V |
| Drain to Source Breakdown Voltage (Vds) | 25 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 2.2 V |
| FET Type(Transistor Polarity) | N-Channel |
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