SI4214DDY-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SI4214DDY-T1-GE3
Datasheet:
Description:
MOSFETs SOIC-8 SMD/SMT N-Channel number of channels:2 3.1 W 30 V Continuous Drain Current (ID):8.5 A 14.5 nC
| Parameter | Value |
|---|---|
| Length | 5 mm |
| Width | 4 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 19.5 mΩ |
| Height | 1.5 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | Unknown |
| Weight | 506.605978 mg |
| Number of Elements | 2 |
| Max Power Dissipation | 3.1 W |
| Power Dissipation | 3.1 W |
| Threshold Voltage | 2.5 V |
| Number of Channels | 2 |
| Input capacitance | 660 pF |
| Continuous Drain Current (ID) | 8.5 A |
| Rds On Max | 19.5 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Turn-On Delay Time | 7 ns |
| Turn-Off Delay Time | 15 ns |
| Element Configuration | Dual |
| Fall Time | 12 ns |
| Rise Time | 45 ns |
| Gate Charge | 14.5 nC |
| Drain to Source Resistance | 19.5 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 1.2 V |
| Drain to Source Breakdown Voltage | 30 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 308
Distributors
pcbx
pcbxUnit Price$0.36682
Ext.Price$0.36682
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.36682 | $0.36682 |
| 10 | $0.28368 | $2.83680 |
| 50 | $0.24238 | $12.11900 |
| 100 | $0.20710 | $20.71000 |
| 500 | $0.18760 | $93.80000 |
| 1000 | $0.17712 | $177.12000 |