SI4378DY-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SI4378DY-T1-GE3
Datasheet:
Description:
MOSFETs SOIC-8 SMD/SMT N-Channel number of channels:1 1.6 W 20 V Continuous Drain Current (ID):19 A 55 nC
| Parameter | Value |
|---|---|
| Length | 5 mm |
| Width | 4 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Height | 1.55 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | Unknown |
| Max Power Dissipation | 1.6 W |
| Power Dissipation | 1.6 W |
| Threshold Voltage | 1.8 V |
| Number of Channels | 1 |
| Input capacitance | 8.5 nF |
| Continuous Drain Current (ID) | 19 A |
| Rds On Max | 2.7 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| Turn-On Delay Time | 85 ns |
| Turn-Off Delay Time | 140 ns |
| Element Configuration | Single |
| Fall Time | 65 ns |
| Rise Time | 65 ns |
| Gate Charge | 55 nC |
| Drain to Source Resistance | 27 mΩ |
| Gate to Source Voltage (Vgs) | 12 V |
| Drain to Source Breakdown Voltage (Vds) | 20 V |
| Gate to Source Threshold Voltage | 1.8 V |
| FET Type(Transistor Polarity) | N-Channel |
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