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SI4386DY-T1-E3

Manufacturer:

Vishay

Mfr.Part #:

SI4386DY-T1-E3

Datasheet:
Description:

MOSFETs SOIC-8 SMD/SMT N-Channel number of channels:1 1.47 W 30 V Continuous Drain Current (ID):16 A 11 nC

ParameterValue
Length5 mm
Width4 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins8
Resistance7 mΩ
Height1.55 mm
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCUnknown
Contact PlatingTin
Number of Elements1
Max Power Dissipation1.47 W
Power Dissipation1.47 W
Number of Channels1
Continuous Drain Current (ID)16 A
Rds On Max7 mΩ
Drain to Source Voltage (Vdss)30 V
Turn-On Delay Time12 ns
Turn-Off Delay Time35 ns
Element ConfigurationSingle
Fall Time9 ns
Rise Time9 ns
Gate Charge11 nC
Drain to Source Resistance7 mΩ
Nominal Vgs2 V
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)30 V
Schedule B8541290080
Gate to Source Threshold Voltage2.5 V
FET Type(Transistor Polarity)N-Channel

Stock: 2257

Distributors
pcbx
Unit Price$1.26444
Ext.Price$1.26444
QtyUnit PriceExt.Price
1$1.26444$1.26444
10$0.88229$8.82290
25$0.79710$19.92750
50$0.72013$36.00650
100$0.65060$65.06000
300$0.58105$174.31500
500$0.51894$259.47000
1000$0.48218$482.18000
3000$0.44714$1341.42000
5000$0.41464$2073.20000