SI4401DDY-T1-GE3
Manufacturer:
VBsemi
Mfr.Part #:
SI4401DDY-T1-GE3
Datasheet:
Description:
MOSFETs SOIC-8 SMD/SMT P-Channel number of channels:1 6.3 W -40 V Continuous Drain Current (ID):16.1 A 33 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Reel |
| RoHS | Compliant |
| Power Dissipation | 6.3 W |
| Number of Channels | 1 |
| Input capacitance | 3.007 nF |
| Continuous Drain Current (ID) | 16.1 A |
| Gate Charge | 33 nC |
| Drain to Source Resistance | 15 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | -40 V |
| Gate to Source Threshold Voltage | -2.5 V |
| FET Type(Transistor Polarity) | P-Channel |
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