SI4410DYTRPBF
Manufacturer:
Infineon
Mfr.Part #:
SI4410DYTRPBF
Datasheet:
Description:
MOSFETs SOIC-8 SMD/SMT N-Channel number of channels:1 2.5 W 30 V Continuous Drain Current (ID):10 A 30 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 30 V |
| Length | 4.9784 mm |
| Width | 3.9878 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 13.5 mΩ |
| Height | 1.4986 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 10 A |
| Max Power Dissipation | 2.5 W |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 1 V |
| Number of Channels | 1 |
| Input capacitance | 1.585 nF |
| Continuous Drain Current (ID) | 10 A |
| Rds On Max | 13.5 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Turn-On Delay Time | 11 ns |
| Turn-Off Delay Time | 38 ns |
| Element Configuration | Single |
| Fall Time | 44 ns |
| Rise Time | 7.7 ns |
| Dual Supply Voltage | 30 V |
| Gate Charge | 30 nC |
| Drain to Source Resistance | 20 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 1 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| On-State Resistance | 13.5 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 3800 |
| FET Type(Transistor Polarity) | N-Channel |
Out of Stock
Distributors
--
--Unit Price$--
Ext.Price$--
| Qty | Unit Price | Ext.Price |
|---|---|---|
No data | ||