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SI4423DY-T1-E3

Manufacturer:

Vishay

Mfr.Part #:

SI4423DY-T1-E3

Datasheet:
Description:

MOSFETs SOIC-8 SMD/SMT P-Channel number of channels:1 1.5 W 20 V Continuous Drain Current (ID):10 A 175 nC

ParameterValue
Length4.9784 mm
Width3.9878 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins8
Resistance7.5 MΩ
Height1.5494 mm
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCNo SVHC
Number of Elements1
Max Power Dissipation1.5 W
Power Dissipation1.5 W
Threshold Voltage-400 mV
Number of Channels1
Continuous Drain Current (ID)10 A
Rds On Max7.5 mΩ
Drain to Source Voltage (Vdss)-20 V
Turn-On Delay Time75 ns
Turn-Off Delay Time460 ns
Element ConfigurationSingle
Fall Time165 ns
Rise Time165 ns
Gate Charge175 nC
Drain to Source Resistance7.5 mΩ
Nominal Vgs-400 mV
Gate to Source Voltage (Vgs)8 V
Drain to Source Breakdown Voltage (Vds)20 V
Schedule B8541290080
Gate to Source Threshold Voltage900 mV
FET Type(Transistor Polarity)P-Channel

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