SI4435DYTRPBF
Manufacturer:
Infineon
Mfr.Part #:
SI4435DYTRPBF
Datasheet:
Description:
MOSFETs SOIC-8 SMD/SMT P-Channel number of channels:1 2.5 W -30 V Continuous Drain Current (ID):-8 A 40 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -30 V |
| Length | 4.9784 mm |
| Width | 3.9878 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 20 MΩ |
| Height | 1.4986 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | -8 A |
| Lifecycle Status | Obsolete (Last Updated: 7 months ago) |
| Max Power Dissipation | 2.5 W |
| Power Dissipation | 2.5 W |
| Threshold Voltage | -1 V |
| Number of Channels | 1 |
| Input capacitance | 2.32 nF |
| Continuous Drain Current (ID) | -8 A |
| Rds On Max | 20 mΩ |
| Drain to Source Voltage (Vdss) | -30 V |
| Turn-On Delay Time | 16 ns |
| Turn-Off Delay Time | 130 ns |
| Element Configuration | Single |
| Fall Time | 31 ns |
| Rise Time | 17 ns |
| Dual Supply Voltage | -30 V |
| Row Spacing | 6.3 mm |
| Gate Charge | 40 nC |
| Drain to Source Resistance | 15 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | -1 V |
| Recovery Time | 51 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | -30 V |
| On-State Resistance | 20 mΩ |
| Package Quantity | 3800 |
| Gate to Source Threshold Voltage | 4 V |
| FET Type(Transistor Polarity) | P-Channel |
Stock: 2945
Distributors
pcbx
pcbxUnit Price$0.56669
Ext.Price$0.56669
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.56669 | $0.56669 |
| 10 | $0.46358 | $4.63580 |
| 25 | $0.42781 | $10.69525 |
| 50 | $0.39480 | $19.74000 |
| 100 | $0.36433 | $36.43300 |
| 300 | $0.34223 | $102.66900 |
| 500 | $0.32146 | $160.73000 |
| 1000 | $0.30468 | $304.68000 |