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SI4447ADY-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI4447ADY-T1-GE3

Datasheet:
Description:

MOSFETs SOIC-8 SMD/SMT P-Channel number of channels:1 2.5 W -40 V Continuous Drain Current (ID):-5.5 A 25 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins8
Height1.75 mm
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCNo SVHC
Number of Elements2
Max Power Dissipation4.2 W
Power Dissipation2.5 W
Threshold Voltage-1.2 V
Number of Channels1
Input capacitance970 pF
Continuous Drain Current (ID)-5.5 A
Rds On Max45 mΩ
Drain to Source Voltage (Vdss)-40 V
Turn-On Delay Time7 ns
Turn-Off Delay Time30 ns
Element ConfigurationSingle
Fall Time9 ns
Rise Time12 ns
Gate Charge25 nC
Drain to Source Resistance36 mΩ
Max Junction Temperature (Tj)150 °C
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)-40 V
Schedule B8541290080
Gate to Source Threshold Voltage1.2 V
FET Type(Transistor Polarity)P-Channel

Stock: 3552

Distributors
pcbx
Unit Price$0.55057
Ext.Price$0.55057
QtyUnit PriceExt.Price
1$0.55057$0.55057
10$0.36933$3.69330
50$0.29840$14.92000
100$0.24109$24.10900
500$0.18552$92.76000
1000$0.16757$167.57000
3000$0.15140$454.20000
5000$0.13679$683.95000
10000$0.11883$1188.30000