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SI4447DY-T1-E3

Manufacturer:

Vishay

Mfr.Part #:

SI4447DY-T1-E3

Datasheet:
Description:

MOSFETs SOIC-8 SMD/SMT P-Channel number of channels:1 1.1 W -40 V Continuous Drain Current (ID):3.3 A 14 nC

ParameterValue
Length5 mm
Width4 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins8
Resistance54 mΩ
Height1.5 mm
PackagingReel
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant
REACH SVHCUnknown
Weight0.187 g
Number of Elements1
Max Power Dissipation1.1 W
Power Dissipation1.1 W
Threshold Voltage-2.2 V
Number of Channels1
Input capacitance805 pF
Continuous Drain Current (ID)3.3 A
Rds On Max54 mΩ
Drain to Source Voltage (Vdss)40 V
Turn-On Delay Time8 ns
Turn-Off Delay Time74 ns
Element ConfigurationSingle
Rise Time12 ns
Gate Charge14 nC
Drain to Source Resistance54 mΩ
Gate to Source Voltage (Vgs)16 V
Drain to Source Breakdown Voltage (Vds)-40 V
Schedule B8541290080
Gate to Source Threshold Voltage2.2 V
FET Type(Transistor Polarity)P-Channel

Stock: 6

Distributors
pcbx
Unit Price$0.75733
Ext.Price$0.75733
QtyUnit PriceExt.Price
1$0.75733$0.75733
10$0.47619$4.76190