SI4455DY-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SI4455DY-T1-GE3
Datasheet:
Description:
MOSFETs SOIC-8 SMD/SMT P-Channel number of channels:1 3.1 W -150 V Continuous Drain Current (ID):2 A 42 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| Number of Elements | 1 |
| Max Power Dissipation | 3.1 W |
| Power Dissipation | 3.1 W |
| Number of Channels | 1 |
| Input capacitance | 1.19 nF |
| Continuous Drain Current (ID) | 2 A |
| Rds On Max | 295 mΩ |
| Drain to Source Voltage (Vdss) | 150 V |
| Turn-On Delay Time | 20 ns |
| Turn-Off Delay Time | 38 ns |
| Element Configuration | Single |
| Fall Time | 34 ns |
| Rise Time | 95 ns |
| Gate Charge | 42 nC |
| Drain to Source Resistance | 295 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | -150 V |
| Gate to Source Threshold Voltage | 4 V |
| FET Type(Transistor Polarity) | P-Channel |
Stock: 1279
Distributors
pcbx
pcbxUnit Price$0.64570
Ext.Price$0.64570
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.64570 | $0.64570 |
| 10 | $0.52771 | $5.27710 |
| 25 | $0.48674 | $12.16850 |
| 50 | $0.44895 | $22.44750 |
| 100 | $0.41409 | $41.40900 |
| 300 | $0.39615 | $118.84500 |
| 500 | $0.37898 | $189.49000 |
| 1000 | $0.36065 | $360.65000 |