0%
Uploading...

SI4477DY-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI4477DY-T1-GE3

Datasheet:
Description:

MOSFETs SOIC-8 SMD/SMT P-Channel number of channels:1 3 W -20 V Continuous Drain Current (ID):-26.6 A 125 nC

ParameterValue
Length5 mm
Width4 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins8
Height1.5 mm
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCNo SVHC
Contact PlatingTin
Number of Elements1
Max Power Dissipation3 W
Power Dissipation3 W
Threshold Voltage-1.5 V
Number of Channels1
Input capacitance4.6 nF
Continuous Drain Current (ID)-26.6 A
Rds On Max6.2 mΩ
Drain to Source Voltage (Vdss)20 V
Turn-On Delay Time42 ns
Turn-Off Delay Time100 ns
Fall Time42 ns
Rise Time42 ns
Gate Charge125 nC
Drain to Source Resistance6.2 mΩ
Gate to Source Voltage (Vgs)12 V
Drain to Source Breakdown Voltage (Vds)-20 V
Schedule B8541290080
Gate to Source Threshold Voltage600 mV
FET Type(Transistor Polarity)P-Channel

Stock: 4458

Distributors
pcbx
Unit Price$1.07636
Ext.Price$1.07636
QtyUnit PriceExt.Price
1$1.07636$1.07636
10$0.70703$7.07030
25$0.64607$16.15175
50$0.59036$29.51800
100$0.53946$53.94600
300$0.48069$144.20700
500$0.42832$214.16000
1000$0.40267$402.67000
3000$0.36359$1090.77000
5000$0.32830$1641.50000