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SI4599DY-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI4599DY-T1-GE3

Datasheet:
Description:

MOSFETs SOIC-8 SMD/SMT N-Channel, P-Channel number of channels:2 2 W 40 V Continuous Drain Current (ID):6.8 A 11.7 nC, 25 nC

ParameterValue
Length5 mm
Width4 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins8
Resistance45 mΩ
Height1.55 mm
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCUnknown
Contact PlatingTin
Number of Elements2
Max Power Dissipation3.1 W
Power Dissipation2 W
Threshold Voltage1.4 V
Number of Channels2
Input capacitance640 pF
Continuous Drain Current (ID)6.8 A
Rds On Max35.5 mΩ
Drain to Source Voltage (Vdss)40 V
Turn-On Delay Time44 ns
Turn-Off Delay Time30 ns
Fall Time13 ns
Rise Time33 ns
Gate Charge11.7 nC, 25 nC
Drain to Source Resistance37 mΩ
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)40 V
Schedule B8541290080
Gate to Source Threshold Voltage1.2 V, 1.4 V
FET Type(Transistor Polarity)N-Channel, P-Channel

Stock: 136

Distributors
pcbx
Unit Price$0.48240
Ext.Price$0.48240
QtyUnit PriceExt.Price
1$0.48240$0.48240
10$0.38410$3.84100
25$0.34926$8.73150
50$0.31758$15.87900
100$0.28877$28.87700
300$0.27306$81.91800
500$0.25821$129.10500
1000$0.24299$242.99000