SI4666DY-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SI4666DY-T1-GE3
Datasheet:
Description:
MOSFETs SOIC-8 SMD/SMT N-Channel number of channels:1 2.5 W 25 V Continuous Drain Current (ID):16.5 A 34 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | Unknown |
| Number of Elements | 1 |
| Max Power Dissipation | 5 W |
| Power Dissipation | 2.5 W |
| Number of Channels | 1 |
| Input capacitance | 1.145 nF |
| Continuous Drain Current (ID) | 16.5 A |
| Rds On Max | 10 mΩ |
| Drain to Source Voltage (Vdss) | 25 V |
| Turn-On Delay Time | 13 ns |
| Turn-Off Delay Time | 27 ns |
| Fall Time | 10 ns |
| Rise Time | 12 ns |
| Gate Charge | 34 nC |
| Drain to Source Resistance | 10 mΩ |
| Nominal Vgs | 600 mV |
| Gate to Source Voltage (Vgs) | 12 V |
| Drain to Source Breakdown Voltage (Vds) | 25 V |
| Gate to Source Threshold Voltage | 1.5 V |
| FET Type(Transistor Polarity) | N-Channel |
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