SI4776DY-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SI4776DY-T1-GE3
Datasheet:
Description:
MOSFETs SOIC-8 SMD/SMT N-Channel number of channels:1 2.5 W Continuous Drain Current (ID):11.9 A
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Packaging | Reel |
| RoHS | Compliant |
| Number of Elements | 1 |
| Max Power Dissipation | 4.1 W |
| Power Dissipation | 2.5 W |
| Number of Channels | 1 |
| Continuous Drain Current (ID) | 11.9 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Turn-On Delay Time | 10 ns |
| Turn-Off Delay Time | 11 ns |
| Fall Time | 6 ns |
| Rise Time | 11 ns |
| Drain to Source Resistance | 13 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Schedule B | 8541290080 |
| FET Type(Transistor Polarity) | N-Channel |
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