SI4830CDY-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SI4830CDY-T1-GE3
Datasheet:
Description:
MOSFETs SOIC-8 SMD/SMT N-Channel number of channels:2 2 W 30 V Continuous Drain Current (ID):7.5 A 25 nC
| Parameter | Value |
|---|---|
| Length | 4.9784 mm |
| Width | 3.9878 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 20 MΩ |
| Height | 1.5494 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | Unknown |
| Weight | 506.605978 mg |
| Contact Plating | Tin |
| Number of Elements | 2 |
| Max Power Dissipation | 2.9 W |
| Power Dissipation | 2 W |
| Threshold Voltage | 1 V |
| Number of Channels | 2 |
| Input capacitance | 950 pF |
| Continuous Drain Current (ID) | 7.5 A |
| Rds On Max | 20 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Turn-On Delay Time | 17 ns |
| Turn-Off Delay Time | 19 ns |
| Element Configuration | Dual |
| Rise Time | 12 ns |
| Gate Charge | 25 nC |
| Drain to Source Resistance | 20 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 3 V |
| FET Type(Transistor Polarity) | N-Channel |
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