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SI4850EY-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI4850EY-T1-GE3

Datasheet:
Description:

MOSFETs SOIC-8 SMD/SMT N-Channel number of channels:1 3.3 W 60 V Continuous Drain Current (ID):6 A 18 nC

ParameterValue
Length5 mm
Width4 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins8
Height1.5 mm
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCNo SVHC
Contact PlatingTin
Number of Elements1
Max Power Dissipation1.7 W
Power Dissipation3.3 W
Threshold Voltage3 V
Number of Channels1
Continuous Drain Current (ID)6 A
Rds On Max22 mΩ
Drain to Source Voltage (Vdss)60 V
Turn-On Delay Time10 ns
Turn-Off Delay Time25 ns
Element ConfigurationSingle
Fall Time12 ns
Rise Time10 ns
Gate Charge18 nC
Drain to Source Resistance22 mΩ
Nominal Vgs3 V
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)60 V
Schedule B8541290080
Gate to Source Threshold Voltage1 V
FET Type(Transistor Polarity)N-Channel

Stock: 915

Distributors
pcbx
Unit Price$0.85507
Ext.Price$0.85507
QtyUnit PriceExt.Price
1$0.85507$0.85507
10$0.77789$7.77890
25$0.74894$18.72350
50$0.72106$36.05300
100$0.69423$69.42300
300$0.68343$205.02900
500$0.67279$336.39500
1000$0.66212$662.12000