SI4925BDY-T1-E3
Manufacturer:
Vishay
Mfr.Part #:
SI4925BDY-T1-E3
Datasheet:
Description:
MOSFETs SOIC-8 SMD/SMT P-Channel number of channels:2 1.1 W -30 V Continuous Drain Current (ID):-5.3 A 50 nC
| Parameter | Value |
|---|---|
| Length | 5 mm |
| Width | 4 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 25 mΩ |
| Height | 1.55 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Weight | 0.187 g |
| Number of Elements | 2 |
| Max Power Dissipation | 1.1 W |
| Power Dissipation | 1.1 W |
| Threshold Voltage | -1 V |
| Number of Channels | 2 |
| Continuous Drain Current (ID) | -5.3 A |
| Rds On Max | 25 mΩ |
| Drain to Source Voltage (Vdss) | -30 V |
| FET Type(Transistor Polarity) | P-Channel |
| Turn-On Delay Time | 9 ns |
| Turn-Off Delay Time | 60 ns |
| Element Configuration | Dual |
| Rise Time | 12 ns |
| Dual Supply Voltage | 30 V |
| Gate Charge | 50 nC |
| Drain to Source Resistance | 20 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | -1 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | -30 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 1 V |
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