SI4925DDY-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SI4925DDY-T1-GE3
Datasheet:
Description:
MOSFETs SOIC-8 SMD/SMT P-Channel number of channels:2 2.5 W -30 V Continuous Drain Current (ID):-7.3 A 32 nC
| Parameter | Value |
|---|---|
| Length | 5 mm |
| Width | 4 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 29 mΩ |
| Height | 1.5 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 2 |
| Max Power Dissipation | 5 W |
| Power Dissipation | 2.5 W |
| Threshold Voltage | -3 V |
| Number of Channels | 2 |
| Input capacitance | 855 pF |
| Continuous Drain Current (ID) | -7.3 A |
| Rds On Max | 27 mΩ |
| Drain to Source Voltage (Vdss) | -30 V |
| Turn-On Delay Time | 10 ns |
| Turn-Off Delay Time | 45 ns |
| Element Configuration | Dual |
| Fall Time | 16 ns |
| Rise Time | 35 ns |
| Gate Charge | 32 nC |
| Drain to Source Resistance | 24 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | -3 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | -30 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 1 V |
| FET Type(Transistor Polarity) | P-Channel |
Stock: 1868
Distributors
pcbx
pcbxUnit Price$0.53318
Ext.Price$0.53318
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.53318 | $0.53318 |
| 10 | $0.43171 | $4.31710 |
| 25 | $0.39619 | $9.90475 |
| 50 | $0.36359 | $18.17950 |
| 100 | $0.33368 | $33.36800 |
| 300 | $0.31880 | $95.64000 |
| 500 | $0.30458 | $152.29000 |
| 1000 | $0.28770 | $287.70000 |