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SI4931DY-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI4931DY-T1-GE3

Datasheet:
Description:

MOSFETs SOIC-8 SMD/SMT P-Channel number of channels:2 1.1 W -12 V Continuous Drain Current (ID):6.7 A 52 nC

ParameterValue
Length5 mm
Width4 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins8
Height1.55 mm
PackagingReel
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant
Weight0.187 g
Number of Elements2
Max Power Dissipation1.1 W
Power Dissipation1.1 W
Number of Channels2
Continuous Drain Current (ID)6.7 A
Rds On Max18 mΩ
Drain to Source Voltage (Vdss)12 V
Turn-On Delay Time25 ns
Turn-Off Delay Time230 ns
Element ConfigurationDual
Rise Time46 ns
Gate Charge52 nC
Drain to Source Resistance18 mΩ
Gate to Source Voltage (Vgs)8 V
Drain to Source Breakdown Voltage (Vds)-12 V
Schedule B8541290080
Gate to Source Threshold Voltage400 mV
FET Type(Transistor Polarity)P-Channel

Stock: 32

Distributors
pcbx
Unit Price$0.73056
Ext.Price$0.73056
QtyUnit PriceExt.Price
1$0.73056$0.73056
10$0.71290$7.12900
25$0.70685$17.67125
50$0.70085$35.04250
100$0.69491$69.49100