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SI5403DC-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI5403DC-T1-GE3

Datasheet:
Description:

MOSFETs ChipFET-8 SMD/SMT P-Channel number of channels:1 2.5 W 30 V Continuous Drain Current (ID):6 A 28 nC

ParameterValue
Length3.05 mm
Width1.65 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins8
Resistance30 mΩ
Height1.1 mm
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCNo SVHC
Number of Elements1
Max Power Dissipation6.3 W
Power Dissipation2.5 W
Threshold Voltage-3 V
Number of Channels1
Input capacitance1.34 nF
Continuous Drain Current (ID)6 A
Rds On Max30 mΩ
Drain to Source Voltage (Vdss)30 V
FET Type(Transistor Polarity)P-Channel
Turn-On Delay Time50 ns
Turn-Off Delay Time30 ns
Fall Time18 ns
Rise Time140 ns
Gate Charge28 nC
Drain to Source Resistance30 mΩ
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)30 V
Schedule B8541290080
Gate to Source Threshold Voltage1 V

Stock: 2189

Distributors
pcbx
Unit Price$0.30605
Ext.Price$0.30605
QtyUnit PriceExt.Price
1$0.30605$0.30605
10$0.26966$2.69660
25$0.25787$6.44675
50$0.24659$12.32950
100$0.23581$23.58100
300$0.23115$69.34500
500$0.22659$113.29500
1000$0.22203$222.03000