SI5411EDU-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SI5411EDU-T1-GE3
Datasheet:
Description:
MOSFETs PowerPAK ChipFET-8 SMD/SMT P-Channel number of channels:1 31 W -12 V Continuous Drain Current (ID):25 A 105 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -50 °C |
| Packaging | Reel |
| RoHS | Compliant |
| Output Current | 1.4 A |
| Max Power Dissipation | 31 W |
| Power Dissipation | 31 W |
| Number of Channels | 1 |
| Input capacitance | 4.1 nF |
| Continuous Drain Current (ID) | 25 A |
| Rds On Max | 8.2 mΩ |
| Drain to Source Voltage (Vdss) | 12 V |
| FET Type(Transistor Polarity) | P-Channel |
| Turn-On Delay Time | 30 ns |
| Turn-Off Delay Time | 70 ns |
| Element Configuration | Single |
| Fall Time | 35 ns |
| Rise Time | 30 ns |
| Gate Charge | 105 nC |
| Drain to Source Resistance | 15.5 mΩ |
| Gate to Source Voltage (Vgs) | 8 V |
| Drain to Source Breakdown Voltage (Vds) | -12 V |
| Gate to Source Threshold Voltage | 900 mV |
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