SI5513CDC-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SI5513CDC-T1-GE3
Datasheet:
Description:
MOSFETs ChipFET-8 SMD/SMT N-Channel, P-Channel number of channels:2 1.7 W 20 V Continuous Drain Current (ID):4 A 4.2 nC, 5.6 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 150 mΩ |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | Unknown |
| Contact Plating | Tin |
| Number of Elements | 2 |
| Max Power Dissipation | 3.1 W |
| Power Dissipation | 1.7 W |
| Number of Channels | 2 |
| Input capacitance | 285 pF |
| Continuous Drain Current (ID) | 4 A |
| Rds On Max | 55 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| FET Type(Transistor Polarity) | N-Channel, P-Channel |
| Gate Charge | 4.2 nC, 5.6 nC |
| Drain to Source Resistance | 120 mΩ |
| Nominal Vgs | 600 mV |
| Gate to Source Voltage (Vgs) | 12 V |
| Drain to Source Breakdown Voltage (Vds) | 20 V |
| Gate to Source Threshold Voltage | 600 mV, 1.5 V |
Stock: 1
Distributors
pcbx
pcbxUnit Price$0.46176
Ext.Price$0.46176
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.46176 | $0.46176 |
| 10 | $0.45293 | $4.52930 |
| 25 | $0.44950 | $11.23750 |
| 50 | $0.44609 | $22.30450 |
| 100 | $0.44271 | $44.27100 |